TK4A55D Datasheet - Toshiba Semiconductor

TK4A55D N-Channel MOSFET

TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A55D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15 Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 μA (max) (VDS = 550 V) Enhancement-mode : Vth = 2.4 to 4.4 V (VDS =.

TK4A55D Datasheet (183.72 KB)