TK62N60W - Silicon N-Channel MOSFET
TK62N60W Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 3.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolut
