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TK62N60W Datasheet - Toshiba Semiconductor

TK62N60W Silicon N-Channel MOSFET

TK62N60W Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 3.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolut

TK62N60W-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK62N60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

244.70 KB

Description:

Silicon n-channel mosfet.

TK62N60W Distributor

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TK62N60W TK62N60W Silicon N-Channel MOSFET Toshiba Semiconductor