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TK72E12N1 Datasheet - Toshiba Semiconductor

TK72E12N1 - Silicon N-Channel MOSFET

TK72E12N1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 3.6 mā„¦ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 ĀµA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK72E12N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolu

TK72E12N1-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK72E12N1

Manufacturer:

Toshiba ā†— Semiconductor

File Size:

247.83 KB

Description:

Silicon n-channel mosfet.

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šŸ“Œ All Tags

TK72E12N1 Silicon N-Channel MOSFET Toshiba Semiconductor