* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum
TK75J04K3Z Datasheet (246.15 KB)
TK75J04K3Z
Toshiba ↗ Semiconductor
246.15 KB
Silicon n-channel mosfet.
TK75J04K3Z
MOSFETs Silicon N-channel MOS (U-MOS)
TK75J04K3Z
1. Applications
*
* Motor Drivers Switching Voltage Regulators
2. Featu.
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