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TK70J04K3Z Datasheet - Toshiba Semiconductor

TK70J04K3Z MOSFETs

TK70J04K3Z Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) 4. Absolute Maximum

TK70J04K3Z Datasheet (238.60 KB)

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Datasheet Details

Part number:

TK70J04K3Z

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

238.60 KB

Description:

Mosfets.

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TK70J04K3Z MOSFETs Toshiba Semiconductor

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