TK8Q60W Datasheet - Toshiba Semiconductor

TK8Q60W, Silicon N-Channel MOSFET

TK8Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK8Q60W 1.

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heat Sink) 3: Source IPAK 4. Absolute

TK8Q60W-ToshibaSemiconductor.pdf