TPC6110 Datasheet - Toshiba Semiconductor

TPC6110 P-Channel MOSFET

TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 0.1mA) Absolute Maximum Ratings (Ta = 25°C) .

TPC6110 Features

* or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or dam

TPC6110_ToshibaSemiconductor.pdf