TPC8025 Datasheet - Toshiba Semiconductor

TPC8025 Field Effect Transistor

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) .

TPC8025 Features

* is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots

TPC8025 Datasheet (219.66 KB)