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TPC8029 Datasheet - Toshiba Semiconductor

TPC8029 Field Effect Transistor

TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Un.

TPC8029 Features

* NS.

* Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, in

TPC8029_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC8029

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

217.88 KB

Description:

Field effect transistor.

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TPC8029 TPC8029 Field Effect Transistor Toshiba Semiconductor

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