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TPC8076

MOSFETs

TPC8076 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPC8076 Datasheet (235.00 KB)

Preview of TPC8076 PDF

Datasheet Details

Part number:

TPC8076

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

235.00 KB

Description:

Mosfets.
TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8076 1. Applications

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* Lithium-Ion Secondary Batteries Notebook PCs Mob.

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TPC8076 MOSFETs Toshiba Semiconductor

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