TPC8076 Datasheet - Toshiba Semiconductor

TPC8076, MOSFETs

TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8076 1.Applications * * * Lithium-Ion Secondary Batteries Notebook PCs Mob.

Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPC8076-ToshibaSemiconductor.pdf