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TPC8073

N-Channel MOSFET

TPC8073 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPC8073 Datasheet (254.27 KB)

Preview of TPC8073 PDF

Datasheet Details

Part number:

TPC8073

Manufacturer:

Toshiba ↗

File Size:

254.27 KB

Description:

N-channel mosfet.
TPC8073 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8073 1. Applications

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* Lithium-Ion Secondary Batteries Power Management.

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TPC8073 N-Channel MOSFET Toshiba

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