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TPC8080

MOSFETs

TPC8080 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPC8080 Datasheet (223.05 KB)

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Datasheet Details

Part number:

TPC8080

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.05 KB

Description:

Mosfets.

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