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TPC8086

MOSFETs

TPC8086 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 5.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPC8086 Datasheet (226.64 KB)

Preview of TPC8086 PDF

Datasheet Details

Part number:

TPC8086

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.64 KB

Description:

Mosfets.
TPC8086 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8086 1. Applications

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* Lithium-Ion Secondary Batteries Power Management.

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TPC8086 MOSFETs Toshiba Semiconductor

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