TPC8082 Datasheet, Mosfets, Toshiba Semiconductor

TPC8082 Features

  • Mosfets (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

PDF File Details

Part number:

TPC8082

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.67kb

Download:

📄 Datasheet

Description:

Mosfets.

Datasheet Preview: TPC8082 📥 Download PDF (223.67kb)
Page 2 of TPC8082 Page 3 of TPC8082

TPC8082 Application

  • Applications
  • Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain

TAGS

TPC8082
MOSFETs
Toshiba Semiconductor

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