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TPC8089H Datasheet - Toshiba

TPC8089H Silicon N-Channel MOSFET

TPC8089H Features

* (1) High-speed switching (2) Small gate charge: QSW = 3.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit

TPC8089H Datasheet (281.45 KB)

Preview of TPC8089H PDF

Datasheet Details

Part number:

TPC8089H

Manufacturer:

Toshiba ↗

File Size:

281.45 KB

Description:

Silicon n-channel mosfet.

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TPC8089H Silicon N-Channel MOSFET Toshiba

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