TPC8110 Datasheet - Toshiba Semiconductor

TPC8110 P-Channel MOSFET

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement-mode: Vth = 0.8 to <.

TPC8110 Features

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TPC8110_ToshibaSemiconductor.pdf