TPC8114 Datasheet - Toshiba Semiconductor

TPC8114 P-Channel MOSFET

TPC8114 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth =

TPC8114 Features

* sed within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

* The TOSHIBA pro

TPC8114_ToshibaSemiconductor.pdf