TPC8A02-H Datasheet - Toshiba Semiconductor

TPC8A02-H N-Channel MOSFET

TPC8A02-H www.DataSheet4U.com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) High-speed switching. Small gate charge.: QSW ＝ 11 nC(Typ.) Low drain-source ON-resistance: R.

TPC8A02-H_ToshibaSemiconductor.pdf