TPC8A02-H N-Channel MOSFET

Toshiba Semiconductor

Description

TPC8A02-H www.DataSheet4U.com ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS .

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Datasheet Specifications

Part number: TPC8A02-H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 507.61 KB
Datasheet: TPC8A02-H_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Notebook PC Applications Portable-Equipment Applications
* Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max. ) High-speed switching. Small gate charge. : QSW ＝ 11 nC(Typ. ) Low drain-source ON-resistance: RDS (ON) =

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TPC8A02-H N-Channel MOSFET Toshiba Semiconductor

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