TPC8A07-H N-Channel MOSFET

Toshiba Semiconductor

Description

TPC8A07-H www.DataSheet4U.com TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H .

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Datasheet Specifications

Part number: TPC8A07-H
Manufacturer: Toshiba ↗ Semiconductor
File Size: 294.74 KB
Datasheet: TPC8A07-H_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Notebook PC Applications Portable-Equipment Applications
* Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ. ) (Q2) QSW = 3.6 nC (typ. ) Low drain-source ON-resistance: (Q1) RDS (ON)

TPC8A07-H Distributors

📁 Related Datasheet

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TPC8A07-H N-Channel MOSFET Toshiba Semiconductor

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