TPC8A07-H Datasheet - Toshiba Semiconductor

TPC8A07-H N-Channel MOSFET

TPC8A07-H www.DataSheet4U.com TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW = 3.6 nC (typ.) Low drain-source ON-resistance: (Q1) RDS (ON) = 21.

TPC8A07-H_ToshibaSemiconductor.pdf