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TPCS8204 Datasheet - Toshiba Semiconductor

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Un.

TPCS8204 Features

* n or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others

TPCS8204_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCS8204

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

304.01 KB

Description:

Toshiba field effect transistor silicon n channel mos type (u-mosiii).

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TPCS8204 TPCS8204 TOSHIBA Field Effect Transistor Silicon Channel MOS Type U-MOSIII Toshiba Semiconductor

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