TPCS8208 Datasheet - Toshiba Semiconductor

TPCS8208 N-Channel MOSFET

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA) Common drain Unit: mm Absolute Maximum Ratings .

TPCS8208 Features

* eating and producing designs and using, customers must also refer to and comply with (a) the

TPCS8208 Datasheet (199.21 KB)

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Datasheet Details

Part number:

TPCS8208

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

199.21 KB

Description:

N-channel mosfet.

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TPCS8208 N-Channel MOSFET Toshiba Semiconductor

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