TPCS8212 - Silicon N Channel MOS Type (U-MOSIII)
TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Common drain Unit: mm Maximum Ratings (Ta = 25°C
TPCS8212 Features
* ontained herein is subject to change without notice. 7 2002
