TPCS8212 Silicon N Channel MOS Type (U-MOSIII)

Toshiba Semiconductor

Description

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications * * .

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Datasheet Specifications

Part number: TPCS8212
Manufacturer: Toshiba ↗ Semiconductor
File Size: 340.70 KB
Datasheet: TPCS8212_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type (U-MOSIII)

Features

* ontained herein is subject to change without notice. 7 2002

Applications

* Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ. ) High forward transfer admittance: |Yfs| = 11 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2

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📁 Related Datasheet

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TPCS8212 Silicon Channel MOS Type U-MOSIII Toshiba Semiconductor

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