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TPCS8212 Datasheet - Toshiba Semiconductor

TPCS8212 Silicon N Channel MOS Type (U-MOSIII)

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Common drain Unit: mm Maximum Ratings (Ta = 25°C.

TPCS8212 Features

* ontained herein is subject to change without notice. 7 2002

TPCS8212_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCS8212

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

340.70 KB

Description:

Silicon n channel mos type (u-mosiii).

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TPCS8212 TPCS8212 Silicon Channel MOS Type U-MOSIII Toshiba Semiconductor

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