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TPCS8205 Datasheet - Toshiba Semiconductor

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics .

TPCS8205_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPCS8205

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

293.06 KB

Description:

Toshiba field effect transistor silicon n channel mos type (u-mos ii).

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TPCS8205 TPCS8205 TOSHIBA Field Effect Transistor Silicon Channel MOS Type U-MOS Toshiba Semiconductor

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