TPCS8213 Datasheet - Toshiba Semiconductor

TPCS8213 N-Channel MOSFET

TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCS8213 Lithium Ion Battery Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 μA) Common drain Unit: mm Absolute Maximum Ratings.

TPCS8213 Features

* luding data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all releva

TPCS8213-ToshibaSemiconductor.pdf