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TPCS8213 N-Channel MOSFET

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Description

TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCS8213 Lithium Ion Battery Applications * Small footprint due .

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Features

* luding data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all releva

Applications

* Small footprint due to a small and thin package
* Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 13 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
* Enhancement-mode: Vth = 0.5~1.4 V (VDS

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