TPCS8213 Datasheet - Toshiba Semiconductor

TPCS8213 N-Channel MOSFET

TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCS8213 Lithium Ion Battery Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.4 V (VDS = 10 V, ID = 200 μA) Common drain Unit: mm Absolute Maximum Ratings.

TPCS8213 Features

* luding data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all releva

TPCS8213 Datasheet (180.11 KB)