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2N3906 Datasheet - Toshiba

2N3906 Silicon PNP Transistor

2N3906 Features

* . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V . Complementary to 2N3904 1. EMITTER 2. BASE 3. C

2N3906 Datasheet (65.50 KB)

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Datasheet Details

Part number:

2N3906

Manufacturer:

Toshiba ↗

File Size:

65.50 KB

Description:

Silicon pnp transistor.

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2N3906 Silicon PNP Transistor Toshiba

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