2N3906 Silicon PNP Transistor

Toshiba

Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.Unit in mm 5.1 MAX..

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Datasheet Specifications

Part number: 2N3906
Manufacturer: Toshiba ↗
File Size: 65.50 KB
Datasheet: 2N3906-Toshiba.pdf
Description: Silicon PNP Transistor

Features

* . Low Leakage Current : ICEV=-50nA(Max. ), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max. ) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ Vcb=-5V . Complementary to 2N3904 1. EMITTER 2. BASE 3. C

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2N3906 Silicon PNP Transistor Toshiba

Toshiba 2N3906-like datasheet