2N3906 Datasheet, Transistor, Toshiba

2N3906 Features

• Transistor . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5m

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2N3906

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Toshiba ↗

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📄 Datasheet

Description:

Silicon pnp transistor.

2N3906 Application

• Applications Unit in mm 5.1 MAX. FEATURES: . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Ga

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2N3906

Toshiba

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