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2N3906 - Silicon PNP Transistor

Toshiba

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Datasheet Details

Part number	2N3906
Manufacturer	Toshiba ↗
File Size	65.50 KB
Description	Silicon PNP Transistor
Datasheet	2N3906-Toshiba.pdf

2N3906 Product details

Features

. Low Leakage Current : ICEV=-50nA(Max. ), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max. ) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ Vcb=-5V . Complementary to 2N3904 1.

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Published: Jun 3, 2024 |