Datasheet4U Logo Datasheet4U.com

2N3904 Silicon NPN Transistor

2N3904 Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS...

2N3904 Features

* . Low Leakage Current : ICEV=50nA(Max. ), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max. ) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N3906 Unit in mm 1. EMITTER 2. BA

📥 Download Datasheet

Preview of 2N3904 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2N3904-T18 - GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR (Seme LAB)
  • 2N3904C - NPN Transistor (KEC)
  • 2N3904CSM - GENERAL PURPOSE NPN TRANSISTOR (Seme LAB)
  • 2N3904DCSM - SILICON NPN DUAL TRANSISTORS (TT)
  • 2N3904G - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2N3904N - NPN Transistor (Pan Jit International)
  • 2N3904S - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • 2N3904SC - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

📌 All Tags

Toshiba 2N3904-like datasheet