2N3904 Datasheet, Transistor, Toshiba

2N3904 Features

• Transistor . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA .

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2N3904

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Toshiba ↗

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📄 Datasheet

Description:

Silicon npn transistor.

2N3904 Application

• Applications . FEATURES . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low S

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2N3904

Toshiba

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