2N3904
2N3904 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. Low Leakage Current
: ICEV=50n A(Max.), I B EV=-50n A(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50m A, l B=5m A . Low Collector Output Capacitance
: C b=4p F(Max.) @ V C B=5V . plementary to 2N3906
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING 60 40
TOSHIBA Weight : 0.21g UNIT
Collector Current ic
200 m A
Base Current
Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
50 m A
350 m W
2.8 m W/°C
Collector Power Dissipation
(Tc=25°C) Derate Linearly 25°C
Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case)
R th(j-a)
R th(j-c)
Junction Temperature Storage Temperature Range
TJ T stg
-55- 150
- In accordance with JEDEC registration data.
W m...
Representative 2N3904 image (package may vary by manufacturer)
