Datasheet Specifications
- Part number
- 2N3904
- Manufacturer
- Toshiba ↗
- File Size
- 71.96 KB
- Datasheet
- 2N3904-Toshiba.pdf
- Description
- Silicon NPN Transistor
Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS...
Features
* . Low Leakage Current : ICEV=50nA(Max. ), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max. ) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N3906 Unit in mm 1. EMITTER 2. BA2N3904 Distributors
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