. Low Leakage Current
: ICEV=50nA(Max. ), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max. ) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max. ) @ V C B=5V . Complementary to 2N3906
Unit in mm
1.
📁 Related Datasheet
2N3904-T18 - GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR (Seme LAB)
