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2N3904 Silicon NPN Transistor

2N3904 Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS...

2N3904 Features

* . Low Leakage Current : ICEV=50nA(Max. ), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max. ) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N3906 Unit in mm 1. EMITTER 2. BA

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Silicon NPN Transistor Toshiba
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