Datasheet4U Logo Datasheet4U.com

2N3905 Datasheet - Toshiba

2N3905 Silicon PNP Transistor

2N3905 Features

* . Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ VCB =-5V . Complementary to 2N3903 J EDEC 1. EMI

2N3905 Datasheet (63.77 KB)

Preview of 2N3905 PDF
2N3905 Datasheet Preview Page 2

Datasheet Details

Part number:

2N3905

Manufacturer:

Toshiba ↗

File Size:

63.77 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

2N3902 NPN Transistor (INCHANGE)

2N3902 Bipolar Transistor (Multicomp)

2N3902 NPN HIGH POWER SILICON TRANSISTOR (Microsemi)

2N3902 Bipolar NPN Device (Seme LAB)

2N3902 HIGH VOLTAGE NPN SILICON TRANSISTORS (Motorola)

2N3902 NPN High Power Silicon Transistors (VPT)

2N3902 NPN High Power Silicon Transistors (MA-COM)

2N3903 NPN Transistor (ON Semiconductor)

TAGS

2N3905 Silicon PNP Transistor Toshiba

2N3905 Distributor