2N3905 Silicon PNP Transistor

Toshiba

Description

: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3905 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.Unit in mm .

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Datasheet Specifications

Part number: 2N3905
Manufacturer: Toshiba ↗
File Size: 63.77 KB
Datasheet: 2N3905-Toshiba.pdf
Description: Silicon PNP Transistor

Features

* . Low Leakage Current : ICEV= -50nA(Max. ), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ VCB =-5V . Complementary to 2N3903 J EDEC 1. EMI

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2N3905 Silicon PNP Transistor Toshiba

Toshiba 2N3905-like datasheet