Datasheet4U.com

2N4124 - Silicon NPN Transistor

Toshiba

📥 Download Datasheet

2N4124 Datasheet Preview — Preview of 2N4124 PDF

datasheet Preview Page 2

Datasheet Details

Part number	2N4124
Manufacturer	Toshiba ↗
File Size	55.14 KB
Description	Silicon NPN Transistor
Datasheet	2N4124-Toshiba.pdf

2N4124 Product details

Features

. Low Leakage Current : ICBO = 50nA(Max. ) @ V C B=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max. ) @ I C =50mA, I B =5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N4126 Unit in mm H 5 I MAX 1.
X < Q46 C.5 6MAX. 1 J 0.4 5 1 1 , -1 CD 5 1.27 i.27 10 "I J 1 X j' 1 < s ^i 2 3 / r~.
J 1.

📁 2N4124 Similar Datasheet

2N4123 - NPN Transistors (ON Semiconductor)
2N4125 - PNP EPITAXIAL SILICON TRANSISTOR (Samsung semiconductor)
2N4126 - Small Signal Low Noise Transistors (TAITRON)
2N4100 - Dual NPN Amplifier (Solid State)
2N4101 - 5-A SILICON CONTROLLED RECTIFIERS (ETC)
2N4102 - Thyristors (RCA)
2N4103 - Thyristors (RCA)
2N4111 - NPN Transistor (INCHANGE)

Other Datasheets by Toshiba

2N4398 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4399 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4400 - Silicon NPN Transistor

Published: Jun 9, 2024 |