2N4400 Datasheet, Transistor, Toshiba

2N4400 Features

• Transistor . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=1

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Part number:

2N4400

Manufacturer:

Toshiba ↗

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62.45kb

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📄 Datasheet

Description:

Silicon npn transistor.

2N4400 Application

• Applications FEATURES . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . L

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2N4400

Toshiba

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