2N4400 Datasheet - Toshiba

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2N4400 Silicon NPN Transistor

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4400 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS..

2N4400-Toshiba.pdf

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Datasheet Details

Part number:

2N4400

Manufacturer:

Toshiba ↗

File Size:

62.45 KB

Description:

Silicon NPN Transistor

Features

* . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max. ) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max. ) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance : C b=6.5pF(Max. ) @ V CB=5V . Complementary to 2N4402 Unit in mm 1. EMITTER

2N4400 Distributors

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2N4400 Silicon NPN Transistor Toshiba

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