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2N4398 Datasheet - Toshiba

2N4398 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

2N4398 Features

* . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (M

2N4398-Toshiba.pdf

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Datasheet Details

Part number:

2N4398

Manufacturer:

Toshiba ↗

File Size:

114.29 KB

Description:

Silicon pnp triple diffused type transistor.

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