Datasheet4U.com

2N4398 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

📥 Download Datasheet

2N4398 Datasheet Preview — Preview of 2N4398 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2N4398
Manufacturer	Toshiba ↗
File Size	114.29 KB
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet	2N4398-Toshiba.pdf

2N4398 Product details

Features

. Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min. ) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max. ) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max. ) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max. ) . Complementary to 2N5301.

📁 2N4398 Similar Datasheet

2N4391 - N-Channel MOSFET (Seme LAB)
2N4392 - N-Channel JFET (Seme LAB)
2N4392-M - TRANSISTOR (DSI)
2N4392CSM - SMALL SIGNAL N-CHANNEL JFET (Seme LAB)
2N4393 - N-Channel JFET (Calogic LLC)
2N4393CSM - SMALL SIGNAL N-CHANNEL JFET (Seme LAB)
2N4393DCSM - SMALL SIGNAL DUAL N-CHANNEL J-FET (Sames)
2N4395 - Silicon NPN Power Transistor (Inchange Semiconductor)

Other Datasheets by Toshiba

2N4399 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4123 - Silicon NPN Transistor
2N4124 - Silicon NPN Transistor
2N4125 - Silicon PNP Transistor
2N4126 - Silicon PNP Transistor
2N4400 - Silicon NPN Transistor

Published: Jul 16, 2018 |