2N4398 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

Description

: SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm .

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Datasheet Specifications

Part number: 2N4398
Manufacturer: Toshiba ↗
File Size: 114.29 KB
Datasheet: 2N4398-Toshiba.pdf
Description: SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Features

* . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min. ) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max. ) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max. ) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (M

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2N4398 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba

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