Datasheet Specifications
- Part number
- 2N4125
- Manufacturer
- Toshiba ↗
- File Size
- 54.36 KB
- Datasheet
- 2N4125-Toshiba.pdf
- Description
- Silicon PNP Transistor
Description
SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.Unit in mm .
Features
* . Low Leakage Current : IcBO=-50nA(Max. ) @ VCB=-20V lEBO=-50nA(Max. ) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O. AV(Max. ) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max. ) @ Vcb=-5V . Complementary to 2N4123 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltag2N4125 Distributors
📁 Related Datasheet
📌 All Tags