2N4399 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

Description

SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING.AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm .

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Datasheet Specifications

Part number: 2N4399
Manufacturer: Toshiba ↗
File Size: 114.85 KB
Datasheet: 2N4399-Toshiba.pdf
Description: SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Features

* . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min. ) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max. ) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max. ) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability :

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2N4399 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba

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