2N4123 Silicon NPN Transistor

Toshiba

Description

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2N4123
Manufacturer: Toshiba ↗
File Size: 55.03 KB
Datasheet: 2N4123-Toshiba.pdf
Description: Silicon NPN Transistor

Features

* . Low Leakage Current : ICBO=50nA(Max. ) @ VCB=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance
* Cob=4pF(Max. ) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATI

2N4123 Distributors

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2N4123 Silicon NPN Transistor Toshiba

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