2N4123 Datasheet - Toshiba

2N4123-Toshiba.pdf

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Datasheet Details

Part number:

2N4123

Manufacturer:

Toshiba ↗

File Size:

55.03 KB

Description:

Silicon npn transistor.

2N4123, Silicon NPN Transistor

2N4123 Features

* . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance

* Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATI

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2N4123 Silicon NPN Transistor Toshiba

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