2N4123 - Silicon NPN Transistor

Datasheet Summary

Features

. Low Leakage Current : ICBO=50nA(Max. ) @ VCB=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance.
Cob=4pF(Max. ) @ VcB=5V . Complementary to 2N4125.

Toshiba

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Datasheet Details

Part number	2N4123
Manufacturer	Toshiba
File Size	55.03 KB
Description	Silicon NPN Transistor
Datasheet	2N4123 Datasheet
Additional preview pages of the 2N4123 datasheet.

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance •• Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current VEBO 5 ic 200 Base Current IB 50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.

Published: Jun 9, 2024 |