2N4123 Datasheet, Transistor, Toshiba

2N4123 Features

• Transistor . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance

PDF File Details

Part number:

2N4123

Manufacturer:

Toshiba ↗

File Size:

55.03kb

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📄 Datasheet

Description:

Silicon npn transistor.

2N4123 Application

• Applications FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @

TAGS

2N4123

Toshiba

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