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2N4123 - Silicon NPN Transistor

Toshiba

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Datasheet Details

Part number	2N4123
Manufacturer	Toshiba ↗
File Size	55.03 KB
Description	Silicon NPN Transistor
Datasheet	2N4123-Toshiba.pdf

2N4123 Product details

Features

. Low Leakage Current : ICBO=50nA(Max. ) @ VCB=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance.
Cob=4pF(Max. ) @ VcB=5V . Complementary to 2N4125.

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Published: Jun 9, 2024 |