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2SA1307 - Silicon PNP Transistor

2SA1307 Description

:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.1Q.3MAX..

2SA1307 Features

* . Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A . High Speed Switching Time : t stg =l .0As(Typ. . Complementary to 2SC3299 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -60 UNIT 7.0 " 03. 2 ±0.2 4 Vt-ja s M -k J 01 -H x' to H 1 1.4 + 0

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Silicon PNP Transistor Toshiba
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