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2SA1308 - Silicon PNP Transistor

2SA1308 Description

:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.Unit in mm .

2SA1308 Features

* . Low Collector Saturation Voltage : VcE(sat)=-0.4V(Max. ) at Ic=-3A . High Speed Switching Time : t s tg=l. 0-«s(Typ. . Complementary to 2SC3308. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -100 V Collector-Emitter Voltage Emitter-Base Voltage VC

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Silicon PNP Transistor Toshiba
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