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2SA816 Datasheet - Toshiba

2SA816 SILICON PNP EPITAXIAL TYPE TRANSISTOR

2SA816 Features

* High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Pow

2SA816-Toshiba.pdf

Preview of 2SA816 PDF

Datasheet Details

Part number:

2SA816

Manufacturer:

Toshiba ↗

File Size:

40.80 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA816 2SA816 SILICON PNP EPITAXIAL TYPE TRANSISTOR Toshiba

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