2SA816 - SILICON PNP EPITAXIAL TYPE TRANSISTOR
2SA816 Features
* High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Pow
