2SA816 SILICON PNP EPITAXIAL TYPE TRANSISTOR

Toshiba

2SA816 Description

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS .

2SA816 Features

* High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Pow

📥 Download Datasheet

2SA816 Datasheet Preview — Preview of 2SA816 PDF

Datasheet Details

Part number: 2SA816
Manufacturer: Toshiba ↗
File Size: 40.80 KB
Datasheet: 2SA816-Toshiba.pdf
Description: SILICON PNP EPITAXIAL TYPE TRANSISTOR

📁 Related Datasheet

2SA811A - PNP SILICON TRANSISTOR (NEC)
2SA812 - PNP Transistor (NEC)
2SA812-M4 - PNP Transistor (MCC)
2SA812-M5 - PNP Transistor (MCC)
2SA812-M6 - PNP Transistor (MCC)
2SA812-M7 - PNP Transistor (MCC)
2SA812K - PNP Transistor (SeCoS Elektronische Bauelemente)
2SA812QLT1 - General Purpose Transistors (WILLAS)

📌 All Tags

SILICON PNP EPITAXIAL TYPE TRANSISTOR Toshiba

Toshiba 2SA816-like datasheet

2SA1021 - Silicon PNP Transistor
2SA1090 - Silicon PNP transistor
2SA1093 - Silicon PNP Transistor
2SA1094 - Silicon PNP Transistor
2SA1095 - Silicon PNP Transistor
2SA1120 - Silicon PNP Transistor