Datasheet Specifications
- Part number
- 2SA816
- Manufacturer
- Toshiba ↗
- File Size
- 40.80 KB
- Datasheet
- 2SA816-Toshiba.pdf
- Description
- SILICON PNP EPITAXIAL TYPE TRANSISTOR
Description
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS .
Features
* High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Pow2SA816 Distributors
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