2SA816 Datasheet, Transistor, Toshiba

2SA816 Features

  • Transistor
  • High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage

PDF File Details

Part number:

2SA816

Manufacturer:

Toshiba ↗

File Size:

40.80kb

Download:

📄 Datasheet

Description:

Silicon pnp epitaxial type transistor.

Datasheet Preview: 2SA816 📥 Download PDF (40.80kb)

2SA816 Application

  • Applications DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES
  • High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX.

TAGS

2SA816
SILICON
PNP
EPITAXIAL
TYPE
TRANSISTOR
Toshiba

📁 Related Datasheet

2SA811A - PNP SILICON TRANSISTOR (NEC)
.

2SA812 - PNP Transistor (NEC)
DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE =.

2SA812 - PNP Transistor (WEITRON)
PNP General Purpose Transistors P b Lead(Pb)-Free 2SA812 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Vo.

2SA812 - SOT-23 BIPOLAR TRANSISTORS (Rectron)
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA812 FEATURES * Power dissipation PCM : 0.2 W(Tamb=25O.

2SA812 - PNP Transistor (HOTTECH)
Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812.

2SA812 - PNP Transistors (Kexin)
SMD Type Transistors PNP Transistors 2SA812 Features High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V .

2SA812 - PNP Transistor (JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 TRANSISTOR (PNP) FEATURES z Complementary to 2SC1623.

2SA812 - PNP Transistor (DC COMPONENTS)
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA812 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio.

2SA812 - Silicon Epitaxial Planar Transistor (GME)
Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. (VCE=-6.0V,IC=.

2SA812 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 。 Complem.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts