Datasheet4U Logo Datasheet4U.com

2SC1626 - SILICON NPN TRANSISTOR

2SC1626 Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS.DRIVER STAGE AMPLIFIER APPLICATIONS..

2SC1626 Features

* High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10.3 MAX 0Z.6 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Stora

📥 Download Datasheet

Preview of 2SC1626 PDF

📁 Related Datasheet

📌 All Tags

Toshiba 2SC1626-like datasheet

2SC1626 Stock/Price