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2SC1626 SILICON NPN TRANSISTOR

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Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS.DRIVER STAGE AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number
2SC1626
Manufacturer
Toshiba ↗
File Size
38.38 KB
Datasheet
2SC1626-Toshiba.pdf
Description
SILICON NPN TRANSISTOR

Features

* High Breakdown Voltage : VCEO=80V Complementary to 2SA816. Unit in mm 10.3 MAX 0Z.6 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Stora

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