Datasheet4U Logo Datasheet4U.com

2SC3239 - Silicon NPN Transistor

Datasheet Summary

Features

  • . Low Collector Saturation Voltage : V CE ( S at)=0.4V(Max. ) (at I C=3A) . High Speed Switching Time : t stg=1.0/is(Typ. . Complementary to 2SA1279.

📥 Download Datasheet

Datasheet preview – 2SC3239

Datasheet Details

Part number 2SC3239
Manufacturer Toshiba
File Size 121.54 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3239 Datasheet
Additional preview pages of the 2SC3239 datasheet.

📁 Similar Datasheet

  • 2SC3230 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3230 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SC3231 - NPN Transistor (INCHANGE)
  • 2SC3231 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3233 - NPN TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)
  • 2SC3233 - NPN Silicon Triple Diffused Transistor (Kexin)
  • 2SC3235 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC3235 - NPN Transistor (INCHANGE)
  • 2SC3200 - SILICON NPN TRANSISTOR (Korea Electronics)
  • 2SC3201 - SILICON NPN TRANSISTOR (Korea Electronics)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . 2SC3239 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : V CE ( S at)=0.4V(Max.) (at I C=3A) . High Speed Switching Time : t stg=1.0/is(Typ. . Complementary to 2SA1279 INDUSTRIAL APPLICATIONS Unit in mm 10. 3 MAX. 03.2x0.2* MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VcBO VcEO 60 50 Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB Tstg ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO V (BR) CEO 25 150 -55~150 1. BASE 2.
Published: |