* . Excellent Switching Times : t r =1.0/is(Max.) , tf =1 . 0,us(Max . ) at I C =6A . High Collector Breakdown Voltage : VcEO=200V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Po
2SC3257
131.46 KB
Silicon npn transistor.
: 2SC3257 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SP.
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