2SC979 Datasheet - Toshiba

2SC979, SILICON NPN TRANSISTOR

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS.HIGH SPEED SWITCHING APPLIA.

Features

* High Breakdown Voltage : VCEO=70V(2SC979A)
* Low Saturation Voltage : VCE(sat)=0.05V (Typ. ) at I C=10mA, I B=lmA
* High Transition Frequency : f T=250MHz (Typ. ) at VCE=10V, I c=10mA
* Low Output Capacitance : Cob=3pF (Typ. )
* Complementary to 2SA499. Unit i

2SC979-Toshiba.pdf