2SC979 SILICON NPN TRANSISTOR

Toshiba

Description

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS.HIGH SPEED SWITCHING APPLIA.

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Datasheet Specifications

Part number: 2SC979
Manufacturer: Toshiba ↗
File Size: 116.85 KB
Datasheet: 2SC979-Toshiba.pdf
Description: SILICON NPN TRANSISTOR

Features

* High Breakdown Voltage : VCEO=70V(2SC979A)
* Low Saturation Voltage : VCE(sat)=0.05V (Typ. ) at I C=10mA, I B=lmA
* High Transition Frequency : f T=250MHz (Typ. ) at VCE=10V, I c=10mA
* Low Output Capacitance : Cob=3pF (Typ. )
* Complementary to 2SA499. Unit i

2SC979 Distributors

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2SC979 SILICON NPN TRANSISTOR Toshiba

Toshiba 2SC979-like datasheet