* High Breakdown Voltage : VCEO=70V(2SC979A)
* Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA
* High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA
* Low Output Capacitance : Cob=3pF (Typ.)
* Complementary to 2SA499. Unit i
2SC979A
116.85 KB
Silicon npn transistor.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
2SC979 2SC979A
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIA.
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