2SK2972 Datasheet, Mosfet, Toshiba

PDF File Details

Toshiba manufacturer logo

Part number:

2SK2972

Manufacturer:

Toshiba ↗

File Size:

164.17kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

📥 Download PDF (164.17kb)

📁 Related Datasheet

2SK2972 - N-Channel MOSFET (VBsemi)
2SK2972-VB 2SK2972-VB Datasheet /$IBOOFM7 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (n.

2SK2973 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

2SK2974 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

2SK2975 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

2SK2976 - N-Channel MOSFET (Sanyo Semicon Device)
Ordering number:ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions .

2SK2977LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Ordering number:ENN6423 N-Channel Silicon MOSFET 2SK2977LS DC/DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimension.

2SK2978 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.09 Ω ty.

2SK2978 - Silicon N-Channel MOSFET (Renesas)
2SK2978 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive cu.

2SK2900-01 - N-channel MOS-FET (Fuji Electric)
> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MO.

2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof .

TAGS

2SK2972 N-Channel MOSFET Toshiba