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2SK3878 Datasheet - Toshiba

2SK3878 N-Channel MOSFET

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Dra.

2SK3878_Toshiba.pdf

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Datasheet Details

Part number:

2SK3878

Manufacturer:

Toshiba ↗

File Size:

211.76 KB

Description:

N-channel mosfet.

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2SK3878 2SK3878 N-Channel MOSFET Toshiba