2SK3878 N-Channel MOSFET

Toshiba

Description

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications * Low drain-source ON-.

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Datasheet Specifications

Part number: 2SK3878
Manufacturer: Toshiba ↗
File Size: 211.76 KB
Datasheet: 2SK3878_Toshiba.pdf
Description: N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rati

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2SK3870 2SK3870-01 2SK3872-01L 2SK3872-01S 2SK3872-01SJ 2SK3873-01

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2SK3878 N-Channel MOSFET Toshiba

Toshiba 2SK3878-like datasheet