Datasheet4U Logo Datasheet4U.com

2SK386 Datasheet - Toshiba

2SK386 N-Channel Transistor

2SK386 Features

* . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max.) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltag

2SK386-Toshiba.pdf

Preview of 2SK386 PDF

Datasheet Details

Part number:

2SK386

Manufacturer:

Toshiba ↗

File Size:

41.43 KB

Description:

N-channel transistor.

📁 Related Datasheet

2SK3800 MOSFET (Sanken)

2SK3800 N-Channel MOSFET (INCHANGE)

2SK3801 MOSFET (Sanken)

2SK3801 N-Channel MOSFET (INCHANGE)

2SK3803 MOSFET (Sanken)

2SK3804-01S N-CHANNEL SILICON POWER MOSFET (Fuji Electric)

2SK3804-01S N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK381 Transistor (ETC)

TAGS

2SK386 2SK386 N-Channel Transistor Toshiba

2SK386 Distributor