2SK3863 Datasheet - Toshiba Semiconductor

2SK3863 N-Channel MOSFET

www.DataSheet4U.com 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3863 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.95 MAX. 0.6 ± 0.15 Unit: mm 6.8 MAX. 5.2 ± 0.2 1.7 ± 0.2 0.6 MAX. Absolute Maximum Ratings (.

2SK3863 Features

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2SK3863_ToshibaSemiconductor.pdf