2SK3868 Datasheet - Toshiba Semiconductor

2SK3868, N-Channel MOSFET

www.DataSheet4U.com 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications *.

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Datasheet Details

Part number:

2SK3868

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

236.00 KB

Description:

N-Channel MOSFET

Features

* s, without limitation, equipme

Applications

* Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ. ) High forward transfer admittance: |Yfs| = 3 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta =

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2SK3868 N-Channel MOSFET Toshiba Semiconductor

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