Datasheet Specifications
- Part number
- 2SK3869
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 251.58 KB
- Datasheet
- 2SK3869_ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
www.DataSheet4U.com 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications *.
Features
* ipment usedApplications
* Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ. ) High forward transfer admittance: |Yfs| = 5.5 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (T2SK3869 Distributors
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