2SK3869 Datasheet - Toshiba Semiconductor

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2SK3869 N-Channel MOSFET

www.DataSheet4U.com 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications *.

2SK3869_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3869

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

251.58 KB

Description:

N-Channel MOSFET

Features

* ipment used

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ. ) High forward transfer admittance: |Yfs| = 5.5 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (T

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2SK3869 N-Channel MOSFET Toshiba Semiconductor

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