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CUHS15S40 Datasheet - Toshiba

CUHS15S40 - Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CUHS15S40 1.

Applications High-Speed Switching 2.

Packaging and Internal Circuit CUHS15S40 1: Cathode 2: Anode US2H 3.

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150

CUHS15S40-Toshiba.pdf

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Datasheet Details

Part number:

CUHS15S40

Manufacturer:

Toshiba ↗

File Size:

130.15 KB

Description:

Schottky barrier diode.

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