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CUHS20S30 Schottky Barrier Diode

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Description

Schottky Barrier Diode Silicon Epitaxial CUHS20S30 1.Applications * High-Speed Switching 2.Packaging and Internal Circuit CUHS20S30 1: Cat.

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Applications

* High-Speed Switching 2. Packaging and Internal Circuit CUHS20S30 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Average rectified current IO (Note 1) 2 A Non-

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