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CUHS20S30 Datasheet - Toshiba

CUHS20S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CUHS20S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS20S30 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Average rectified current IO (Note 1) 2 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150 .

CUHS20S30 Datasheet (205.83 KB)

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Datasheet Details

Part number:

CUHS20S30

Manufacturer:

Toshiba ↗

File Size:

205.83 KB

Description:

Schottky barrier diode.

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CUHS20S30 Schottky Barrier Diode Toshiba

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