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CUHS20F40 Datasheet - Toshiba

CUHS20F40 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CUHS20F40 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS20F40 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 2.0 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150 .

CUHS20F40 Datasheet (202.72 KB)

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Datasheet Details

Part number:

CUHS20F40

Manufacturer:

Toshiba ↗

File Size:

202.72 KB

Description:

Schottky barrier diode.

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CUHS20F40 Schottky Barrier Diode Toshiba

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