CUHS20F40 - Schottky Barrier Diode
Schottky Barrier Diode Silicon Epitaxial CUHS20F40 1.
Applications High-Speed Switching 2.
Packaging and Internal Circuit CUHS20F40 1: Cathode 2: Anode US2H 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 2.0 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150 Storage temperature Tstg -55 to 150
